Publications

List of Journal Articles

      (Asterisk * denotes corresponding author)
  • Long, X., Tan, H., Sánchez, F., Fina, I., & Fontcuberta, J. (2021). Non-volatile optical switch of resistance in photoferroelectric tunnel junctions. Nature communications, 12(1), 1-9.
  • Long, X., Tan, H., Sánchez, F., Fina, I., & Fontcuberta, J. Disentangling electronic and thermal contributions to the observed light-induced resistance switching in BaTiO3 ferroelectric tunnel junction. J. Appl. Phys. 2022, 132, 214103.
  • Long, X., Tan, H., Sánchez, F., Fina, I., & Fontcuberta, J. (2023). Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions. ACS Applied Electronic Materials, 5(2), 740-747.
  • Long, X., Tan, H., Estandía, S., Gazquez, J., Sánchez, F., Fina, I., & Fontcuberta, J. (2022). Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers. APL Materials, 10(3), 031114.
  • Lyu, S., Long, X.* , Yang, Y. , Wei, W. , Chen, Y., Xie, H. , Nie, B. , Wang, B. , Wang, Y., Jiang, P. , Gong, T. , Wang, Y., Luo, Q. (2024). Enhanced Electro-Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer. Advanced Electronic Materials,  2400466.
  • Sulzbach, M. C., Estandía, S., Long, X., Lyu, J., Dix, N., Gàzquez, J., … & Fontcuberta, J. (2020). Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions. Advanced Electronic Materials, 6(1), 1900852.
  • Qin, X., Zhong, B., Lv, S., Long, X., Xu, H., Li, L., … & Wang, L. (2024). A Zero‐Voltage‐Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction. Advanced Materials, 2404026.
  • Lyu, S., Wei, W., Yang, Y., Zhao, S., Wang, Y., Long, X., … & Luo, Q. (2023). Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate through ZrO2 Interfacial Layer Induced Low-Temperature Annealing. IEEE Electron Device Letters.
  • Long, X., Zeng, Z., Guo, E., Shi, X., Zhou, H., & Wang, X. (2016). Facile fabrication of all-solid-state flexible interdigitated MnO2 supercapacitor via in-situ catalytic solution route. Journal of Power Sources, 325, 264-272.
  • Zeng, Z., Long, X., Zhou, H., Guo, E., Wang, X., & Hu, Z. (2015). On-chip interdigitated supercapacitor based on nano-porous gold/manganese oxide nanowires hybrid electrode. Electrochimica Acta, 163, 107-115.
  • Zeng, Z., Zhou, H., Long, X., Guo, E., & Wang, X. (2015). Electrodeposition of hierarchical manganese oxide on metal nanoparticles decorated nanoporous gold with enhanced supercapacitor performance. Journal of Alloys and Compounds, 632, 376-385.
  • Shi, X., Zeng, Z., Guo, E., Long, X., Zhou, H., & Wang, X. (2017). A growth mechanism investigation on the anodic deposition of nanoporous gold supported manganese oxide nanostructures for high performance flexible supercapacitors. Journal of Alloys and Compounds, 690, 791-798.
  • Guo, E., Zeng, Z., Shi, X., Long, X., & Wang, X. (2016). Electrical transport properties of au nanoparticles and thin films on Ge probed using a conducting atomic force microscope. Langmuir, 32(41), 10589-10596.
  • Guo, E., Zeng, Z., Zhang, Y., Long, X., Zhou, H., & Wang, X. (2016). The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode. Microelectronics Reliability, 62, 63-69.
  • Tao, S., Zeng, Z., Shi, X., Liao, C., Guo, E., Long, X., … & Dai, Y. (2018). Important effect of Pt modification at the collector/active material interface of flexible micro-supercapacitors. Applied Surface Science, 456, 410-418.
  • Shi, X., Zeng, Z., Liao, C., Tao, S., Guo, E., Long, X., … & Dai, Y. (2018). Flexible, planar integratable and all-solid-state micro-supercapacitors based on nanoporous gold/manganese oxide hybrid electrodes via template plasma etching method. Journal of Alloys and Compounds, 739, 979-986.

Representative Work

Thesis / Book

  • Long, Xiao. “Photoresistance and electroresistance in ferroelectric tunnel junctions based on BaTiO3 and Hf0.5Zr0.5O2.” (2022).
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